MIL-M-38510-208 Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, titanium-tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/208F

4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535.

4.4 Technology Conformance inspection (TCI). Technology conformance inspection shall be in accordance with MIL-PRF-38535 and as specified herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4).

4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows:

a. Electrical test requirements shall be as specified in table II herein. b. Subgroups 4, 5, and 6 shall be omitted.

c. For unprogrammed devices, a sample shall be selected to satisfy programmability requirements prior to performing subgroups 9, 10, and 11. Twelve devices shall be submitted to programming (see

3.3.2.1). If more than 2 devices fail to program, the lot shall be rejected. At the manufacturer's option, the sample may be increased to 24 total devices with no more than 4 total device failures

allowed.

d. For unprogrammed devices, 10 devices from the programmability sample shall be submitted to the requirements of group A, subgroups 9, 10, and 11. If more than two total devices fail in all three subgroups, the lot shall be rejected. At the manufacturer's option, the sample may be increased to 20 total devices with no more that 4 total device failures allowed.