MIL-M-38510-208 Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, titanium-tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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Parameter

Symbol

Conditions

Limits   1/

Unit

Min

Recommended

Max

VCC  required during programming

VCCP

5.4

5.5

5.6

V

Rise time of programming pulse to

data out or programming pin

tTLH

0.34

0.40

0.46

V/µs

Programming voltage on programming pin

VPP

32.5

33

33.5

V

Output programming

voltage

VOUT

25.6

26

26.5

V

Programming pin pulse

width ( CE 2)    2/

tPP

Chip disabled,

VCC  = 5.5 V

100

180

ns

Pulse width of

programming voltage

tP

Chip disabled,

VCC  = 5.5 V

1

40

µs

Required current limit of

power supply feeding programming pin and output during programming

IL

VPP  = 33 V, VOUT  = 26 V, VCC  = 5.5 V

240

mA

Required time delay between disabling

memory output and application of output

programming pulse

TD1

Measured at 10% levels

70

80

90

µs

Required time delay

between removal of programming pulse and enabling memory output

TD2

Measured at 10% levels

100

ns

Output current during verification

IOLV1

Chip enabled, VCC  = 4.0 V

11

12

13

mA

IOLV2

Chip enabled, VCC  = 7.0 V

0.19

0.2

0.21

mA

Address input voltage

VIH

2.4

5.0

5.5

V

VIL

0.0

0.4

0.8

V

Maximum duty cycle

during automatic programming of program pin and output pin

D.C.

tP/ tC

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