MIL-M-38510-208 Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, titanium-tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/208F

1/  For unprogrammed devices, select an appropriate address to acquire the desired output state.

2/  For unprogrammed devices (circuit D), apply 12.0 V on pin 8 (A0) and pin 1 (A7).

3/  For unprogrammed device types 01 and 02 (circuit B), apply 12.0 V on pin 2 (A6); for unprogrammed device types

04 and 05 (circuit B), apply 12.0 V on pin 2 (A1).

4/  For unprogrammed devices (circuit A), apply 11.0 V on pin 23 (A8).

5/  CE4  and CE3  may be "GND" or "2.4 V".

6/  The functional test shall verify that no fuses are blown for unprogrammed devices or that the altered item drawing pattern exists for programmed devices (see table II and 3.3.2.2).  All bits shall be tested.  The functional tests shall be performed with VCC  = 4.5 V and VCC  = 5.5 V.  Terminal conditions shall be as follows:

a.  Inputs:  H = 3.0 V, L = 0.0 V.

b.  Outputs:  Output voltage shall be either:

(1)   H = 2.4 V minimum and L = 0.5 V maximum when using a high-speed checker double comparator, or

(2)   H � 1.0 V and L < 1.0 V when using a high-speed checker single comparator.

7/  GALPAT (PROGRAMMED PROM).  This program will test all bits in the array, the addressing and interaction between bits for ac performance, tPLH1 and tPHL1.  Each bit in the pattern is fixed by being programmed with an "H" or "L".  The GALPAT tests shall be performed with VCC  = 4.5 V and 5.5 V.

Description:

Step 1.  Word 0 is read. Step 2.  Word 1 is read. Step 3.  Word 0 is read. Step 4.  Word 2 is read. Step 5.  Word 0 is read.

Step 6.  The reading procedure continues back and forth between word 0 and the next higher numbered word until word 511 is reached, then increments to the next word and reads back and forth as in

step 1 through step 6 and shall include all words.

Step 7.   Pass execution time = (n2  + n) x cycle time.  n = 512.

8/  SEQUENTIAL (PROGRAMMED PROM).  This program will test all bits in the array for tPLH2  and tPHL2.  The

SEQUENTIAL tests shall be performed with VCC  = 4.5 V and 5.5 V.

Description:

Step 1.  Each word in the pattern is tested from the enable lines to the output lines for recovery. Step 2.  Word 0 is addressed.  Enable line is pulled high to low and low to high.  tPHL2  and tPLH2 are Step 3.  Word 1 is addressed.  Same enable sequence as above.

Step 4.  The reading procedure continues until word 511 is reached. Step 5.   Pass execution time = 512 x cycle time.

9/  The outputs are loaded per figure 6.

10/  For uprogrammed device types 01 and 02 (circuit C), apply 10.0 V on pin 23 (A8); 0.5 V on pin 2 (A6); and 5.0 V

on all other address pins.  For unprogrammed device type 03 (circuit C), apply 10.0 V on pin 6 (A8); 0.5 V on pin

22 (A1); and 5.0 V on all other address pins.

11/  For unprogrammed devices (circuit F), apply 12.0 V on pin 3 (A2) and 0.0 V on pin 4 (A3).

12/  IOL = 8 mA for circuit B devices; IOL  = 16 mA for circuit F devices.

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