MIL-M-38510-208 Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, titanium-tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/208F

4.10   Programming procedure for circuit D.  The waveforms on figure 7d, the programming characteristics of table

IVD, and the following procedures shall apply:

a.  Connect the device in the electrical configuration for programming.

b.  Address the PROM with the binary address of the selected word to be programmed.  Address inputs are

TTL compatible.

c.   Disable the chip by applying VIH  to the  CE 1  and  CE 2  inputs and VIL  to the CE3  and CE4  inputs.  The chip enable input is TTL compatible.

d.  After a delay of tD, apply only one VOUT  pulse with a duration of tp to the ouput selected for programming.

The other outputs may be left open or tied to VIH.  The outputs shall be programmed one output at a time.

Note that the PROM is supplied with fuses generating a high-level logic output.  Programming a fuse will

cause the output to go to a low-level logic in the verify mode.

e.  Other bits in the same word may be programmed sequentially by applying VOUT  pulses to each output to be programmed.

f.   Repeat 4.10b through 4.10e for all other bits to be programmed.

g.  Enable the chip by applying VIL  to the  CE 1  and  CE 2   inputs and VIH  to the CE3  and CE4  inputs and verify the program.

h.  For class S and B devices, if any bit does not verify as programmed, it shall be considered a programming reject.

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