MIL-M-38510-208 Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, titanium-tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27 - 28 - 29 - 30 - 31 - 32 - 33 - 34 - 35 - 36 - 37 - 38 - 39 - 40 - 41 - 42 - 43 - 44 - 45 - 46 - 47 - 48 - 49 - 50 - 51 - 52 - 53 - 54

MIL-M-38510/208F

g. Other bits in the same word may be programmed sequentially while the VCC input is at the VPH level by applying VOPE pulses to each output to be programmed allowing a delay of tD between pulses as shown on figure 7a.

h. Repeat steps 4.7b through 4.7g for all other bits to be programmed.

i. Lower VCC to 4.5 volts following a delay of tD from the last programming pulse applied to an output.

j. Enable the chip by applying VIL to the CE 1 and CE 2 inputs and VIH to the CE3 and CE4 inputs and verify the program.

k. For class S and B devices, if any bit does not verify as programmed, it shall be considered a programming reject.