MIL-M-38510-208 Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, titanium-tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/208F

TABLE IVA. Programming characteristics for circuit A.

Parameter	Symbol	Limits 1/			Unit
Parameter	Symbol	Min	Recommended	Max	Unit
Address input voltage 2/	VIH VIL	2.4 0.0	5.0 0.4	5.0 0.8	V V
VCC required during programming	VPH VPL	12.0 4.5	12.0 4.5	12.5 5.5	V V
Programming input low current	IILP	----	-300	-600	µA
Programming voltage transition time	tTLH tTHL	1 1	1 1	10 10	µs µs
Programming delay	tD	10	10	100	µs
Programming pulse width	tP	90	100	110	µs
Programming duty cycle	D.C.	----	50	90	%
Output voltage Enable 3/ Disable 4/	VOPE VOPD	10.5 4.5	10.5 5.0	11.0 5.5	V V
Output voltage enable current	IOPE	----	----	10	mA

1/ TA = +25°C.

2/ Address and chip enable shall not be left open for VIH.

3/ VOPE supply shall be capable of sourcing 10 mA.

4/ Disable condition can be met with output open circuit.