MIL-M-38510-208 Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, titanium-tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/208F

4.4.2 Group B inspection. Group B inspection shall be in accordance with table II MIL-PRF-38535.

4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows:

a. End-point electrical parameters shall be as specified in table II herein.

b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883.

c. For qualification, at least 25 percent of the sample selected for life testing shall be programmed (see

3.3.2). For quality conformance inspection, the programmability sample (see 4.4.1c) shall be included in the life test.

4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535 and as follows:

a. End-point electrical tests shall be as specified in table II herein. b. Subgroup 2 shall be omitted for devices in package Z.

c. For moisture resistance and salt atmosphere of subgroups 3 and 5, omit initial conditioning for devices in package Z.

4.5 Methods of inspection. Methods of inspection shall be as specified and as follows:

4.5.1 Voltage and current. All voltages given are referenced to the microcircuit ground terminal. Currents given are conventional and positive when flowing into the referenced terminal.

4.6 Programming procedure identification. The programming procedure to be utilized shall be identified by the manufacturer's circuit designator.

4.7 Programming procedure for circuit A. The waveforms on figure 7a, the programming characteristics in table

IVA and the following procedures shall apply:

a. Connect the device in the electrical configuration for programming.

b. Address the PROM with the binary address of the selected word to be programmed. Address inputs are

TTL compatible.

c. Disable the chip by applying VIH to the CE 1 and CE 2 inputs and VIL to the CE3 and CE4 inputs. The CE

inputs are TTL compatible.

d. Disable the programming circuitry by applying a voltage of VOPD to the outputs of the PROM. e. Raise VCC to VPH as specified on the waveforms on figure 7a.

f. After a delay of tD, apply only one VOPE pulse with duration of tp to the output selected for programming.

Note that the PROM is supplied with fuses generating a high-level logic output. Programming a fuse will

cause the output to go to a low-level logic in the verify mode.