MIL-M-38510-208 Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, titanium-tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/208F

4.9   Programming procedures for circuits C and H.  The waveforms on figure 7c, the programming characteristics in table IVC, and the following procedures shall be used for programming the device:

4.9.1   Device types 01 and 02.

a.  Connect the device in the electrical configuration for programming.

b.  Terminate all device outputs with a 10 kn resistor to VCC.  Apply  CE 1  = VIH,  CE 2 = VIL, CE3 = VIH, and

CE4 = VIH.

c.   Address the PROM with the binary address of the selected word to be programmed.  Raise VCC  to VCCP.

d.  After a tD  delay (10µs), apply only one VOUT  pulse to the output to be programmed.  Program one output at a time.

e.  After a tD  delay (10µs), pulse CE1  input to logic "0" for a duration of tP.

f.   After a tD  delay (10µs), remove the VOUT  pulse from the programmed output.  Programming a fuse will cause the output to go to a high-level logic in the verify mode.

g.  Other bits in the same word may be programmed sequentially while the VCC  input is at the VCCP  level by applying VOUT   pulses to each output to be programmed allowing a delay of tD  between pulses as shown on figure 7c.

h.  Repeat 4.9.1c through 4.9.1g for all other bits to be programmed.

i.   To verify programming, after tD  (10 µs) delay, lower VCC  to VCCH  and apply a logic "0" level to both  CE 1  and

CE 2  inputs.  The programmed output should remain in the "1" state.  Again, lower VCC  to VCCL  and verify that the programmed output remains in the "1" state.

j.   For class S and B devices, if any bit does not verify as programmed it shall be considered a programming reject.

4.9.2   Device type 03.

a.  Connect the device in the electrical configuration for programming.

b.  Terminate all device outputs with a 10 kn resistor to VCC.  Apply  CE 1  = VIL,  CE 2  = VIH, and strobe = VIH. c.   Address the PROM with the binary address of the selected word to be programmed.  Raise VCC  to VCCP.

d.  After a tD  delay (10µs), apply to FE1  (pin 13) a voltage source of +5.0 ± 0.5 V, with 10 mA sourcing current capability.

e.  After a tD  delay (10µs), apply only one VOUT  pulse to the output to be programmed.  Program one output at a time.

f.   After a tD  delay (10µs), raise FE2  (pin 11) from GND to +5.0 ± 0.5 V for 1 ms, and return to GND. g.  After a tD  delay (10 µs), remove the VOUT  pulse from the programmed output.

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