MIL-M-38510-208 Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, titanium-tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27 - 28 - 29 - 30 - 31 - 32 - 33 - 34 - 35 - 36 - 37 - 38 - 39 - 40 - 41 - 42 - 43 - 44 - 45 - 46 - 47 - 48 - 49 - 50 - 51 - 52 - 53 - 54

Subgroup

Symbol

MIL- STD-

883

method

Cases

J,K,X

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

Measured terminal

Test limits

Unit

Test no.

A3

A4

A5

A6

A7

A8

01

02

03

04

FE2

GND

FE1

05

06

07

08

Strobe

CE 2

CE 1

A0

A1

A2

VCC

Min

Max

1

TC=25°C

I0HZ

57

58

59

60

61

62

63

64

5.2V

5.2V

5.2V

5.2V

GND "

" "

" " "

"

5.2V

5.2V

5.2V

5.2V

0.5V "

" "

" " "

"

2.4V "

" "

" " "

"

0.5V "

" "

" " "

"

5.5V "

" "

" " "

"

01

02

03

04

05

06

07

08

100 "

" "

" " "

"

µA "

" " "

" "

"

I0LZ

65

66

67

68

69

70

71

72

0.5V

0.5V

0.5V

0.5V

"

" " " " " " "

0.5V

0.5V

0.5V

0.5V

"

" " " " " " "

"

" " " " " " "

"

" " " " " " "

"

" " " " " " "

01

02

03

04

05

06

07

08

-100

" " " " " " "

µA "

"

" "

"

" "

ICC

3005

73

GND

GND

GND

GND

GND

GND

GND

"

GND

GND

GND

GND

"

VCC

185

mA

I0S

3011 "

"

" " " " "

74

75

76

77

78

79

80

81

11 "

"

" " " " "

11 "

"

" " " " "

11 "

"

" " " " "

11   251 "

"

" " " " "

11 "

"

" " " " "

11 101 "

"

" " " " "

GND

GND

GND

GND

" " "

" "

" " "

GND

GND

GND

GND

" " "

" "

" " "

5.5V "

"

" " " " "

" " "

" "

" " "

11 "

"

" " " " "

11 101 "

"

" " " " "

11 "

"

" " " " "

" " "

" "

" " "

01

02

03

04

05

06

07

08

-10 "

"

" " " " "

-100 "

"

" " " " "

mA "

"

" " " " "

2

Same tests, terminal conditions, and limits as for subgroup 1, except TC  = 125°C and VIC  tests are omitted.

3

Same tests, terminal conditions, and limits as for subgroup 1, except TC  = -55°C and VIC  tests are omitted.

7

TC=25°C

Func-

tional test

3014

82

61

61

61

61

61

61

61

61

61

61

61

GND

61

61

61

61

61

61

61

61

61

61

61

0utputs

61

8

Same tests, terminal conditions, and limits as for subgroup 7, except TC  = 125°C and TC  = -55°C.

9

TC=25°C

tPLH1 tPHL1 tPLH2 tPHL2

GALPAT Fig. 6

GALPAT

Fig. 6

Sequen- tial

Fig. 6

Sequen- tial

Fig. 6

83

84

85

86

71

71

81

81

71

71

81

81

71

71

81

81

71

71

81

81

71

71

81

81

71

71

81

81

91 "

" "

91 "

" "

91 "

" "

91 "

" "

GND "

" "

GND "

" "

GND "

" "

91 "

" "

91 "

" "

91 "

" "

91 "

" "

GND "

" "

5.5V "

" "

GND "

" "

71

71

81

81

71

71

81

81

71

71

81

81

71

71

81

81

0utputs

" " "

90

90

50

50

ns

" " "

10

Same tests, terminal conditions, and limits as for subgroup 9, except TC  = 125°C.

11

Same tests, terminal conditions, and limits as for subgroup 9, except TC  = -55°C.