MIL-M-38510-208 Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, titanium-tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/208F

Device types 01 and 02

NOTES:

1. Test table for devices programmed in accordance with an altered item drawing may be replaced by the equivalent tests which apply to the specific program configuration for the resulting read-only memory

2. CL = 30 pF minimum, including jig and probe capacitance, R1 =330 n ±25%, and R2 = 680 n ±20%.

3. Outputs may be under load simultaneously.

FIGURE 6. Switching time test circuit.