MIL-M-38510-51 Microcircuits, Digital, Cmos, Flip-Flops And Latchets, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance RHA are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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MIL-M-38510/51F

4.4.4  Group D inspection.  Group D inspection shall be in accordance with table V of MIL-PRF-38535.  End-point electrical parameters shall be as specified in table II herein.

4.4.5  Group E inspection.  Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.7 herein).  RHA levels for device classes B and S shall be as specified in MIL-PRF-38535 and 4.5.4 herein.

4.5  Methods of inspection.  Methods of inspection shall be specified and as follows:

4.5.1  Voltage and current.  Unless otherwise specified, all voltages given are referenced to the microcircuit VSS

terminal.  Currents given are conventional current and positive when flowing into the referenced terminal.

4.5.2  Burn-in and life test cool down procedures.  When the burn-in and life tests are completed and prior to removal of bias voltages, the devices under test (DUT) shall be cooled to a temperature of 25°C ±3°C; then, electrical parameter end- point measurements shall be performed.

TABLE IV.  Delta limits at 25°C.

1/  Each of the above parameters shall be recorded before and after the required burn-in and life tests to determine delta (�).

4.5.3   Quiescent supply current (ISS test).  When performing quiescent supply current measurements (ISS), the meter shall be placed so that all currents flow through the meter.

4.5.4  Radiation hardness assurance (RHA) testing.  The RHA testing shall be performed in accordance with test procedures and sampling specified in MIL-PRF-38535 and herein.

a.        Before irradiation, selected samples shall be assembled in qualified packages and pass the governing electrical parameters (group A subgroup 1 at 25°C) and also be subjected to the threshold-voltage test in table VII in

order to calculate the delta threshold (�VT) after irradiation.

b.        The devices shall be subjected to a total radiation dose as specified in MIL-PRF-38535 for the radiation hardness assurance level being tested, and meet the end-point electrical parameters as defined in table V at

25°C, after exposure.  The start and completion of the end-point electrical parameter measurements shall not exceed 2 hours following irradiation.

c.        Threshold-voltage test circuit conditions shall be as specified in table VII and on figure 17.  In situ and remote testing, the tests shall be performed with the devices biased in accordance with table VI and the bias may be interrupted for up to 1 minute to remove devices to the remote bias fixture.

d.        After irradiation, the devices shall pass the truth table test as specified in subgroup 7 in table III or if subgroup 7 is not required, then an equivalent truth table test shall be performed.

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