MIL-M-38510-238 Microcircuits, Digital, Mos, 4096 Bit Static Random Access Memory Ram, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, N-channel static MOS, 4096 bit random access memories. Two product assurance classes and a choice of case outlines/lead finish are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-3851O/238B

APPENDIX A

A.1.5  Pattern 5.

Diagonal GALRESH (with row column ping pong read GG II).  This pattern will test all bits in the array for writing interaction for switching performance.

a.  Initialize the memory by writing a field of O's.

b.  Perform the following read write sequence moving the test bit along the diagonal of the memory;  and reading only the row and column of the test bit in ping ping fashion:

RO = Read "O"                                                              WI = Write "1" etc.

BACKROUND BIT

TEST BIT

c.   Reinitialize the memory by writing a field of l's.

d.  Perform the following read write sequence moving the test bit along the diagonal of the memory;  and reading only the row and column of the test bit in ping pong fashion:

BACKROUND BIT

TEST BIT

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