MIL-M-38510-238 Microcircuits, Digital, Mos, 4096 Bit Static Random Access Memory Ram, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, N-channel static MOS, 4096 bit random access memories. Two product assurance classes and a choice of case outlines/lead finish are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-385101238B

TABLE I. Electrical performance characteristics - Continued.

Test	Symbol	Conditions -55°C < TC < +125°C unless otherwise specified	Device types	Limits		Unit
Test	Symbol	Conditions -55°C < TC < +125°C unless otherwise specified	Device types	Min	Max	Unit
Write recovery time	tWR	See table III	01, 03	15		ns
			02, 04	0		ns
			05, 07	10		ns
			06	5		ns
Data valid to end of write	tDW		01	35		ns
			02	200		ns
			03	30		ns
			04	135		ns
			05, 06	25		ns
			07	25		ns
Data hold time	tDH		01, 03 05, 07	10		ns
Data hold time	tDH		02, 04, 06	0		ns
Write enabled to output in High-Z 41 71	tWZ		01	0	65	ns
			02	0	100	ns
			03	0	35	ns
			04	0	60	ns
			05, 06, 07	0	25	ns
Output active from end of write 41 71	tOW		01, 03, 05, 06, 07	0		ns

11 Output levels are tested in static state and are specified over voltage range of VCC.

21 Unless otherwise specified, the dynamic load shall be in accordance with figure 4 (load A).

31 Duration not exceed 1 second.

41 Not tested.

51 Complete terminal conditions are as specified in table III.

61 Chip deselected for a finite time that is less than 55 ns prior to selection. (If the deselect time is 0 ns, the chip is by definition selected and access occurs according to read cycle no 1.)

71 Transition is measured ±500 mV from steady state voltage using figure 4 (load B).