MIL-M-38510-238 Microcircuits, Digital, Mos, 4096 Bit Static Random Access Memory Ram, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, N-channel static MOS, 4096 bit random access memories. Two product assurance classes and a choice of case outlines/lead finish are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/2388

Wavefroms

NOTES:

1. Chip deselected for greater than 55 ns prior to selection.

2. Chip deselected for a finite time that is less than 55 ns prior to selection. (If the deselect time is 0 ns the chip is by definition selected and access occurs according to read cycle no. 1.)

3. WE is high for read cycles.

4. Device is continuously selected, CS = VIL.

5. Addresses valid prior to or coincident with CS transition low.

6. See table I for limits and complete terminal conditions.

7. Input and output timing reference levels are 1.5 volts with input pulse levels of ground to 3.0 volts.

8. tLZ and tHZ are measured at ±500 mV from steady state with 5 pF load.

FIGURE 5. Read cycle waveforms and test conditions for device types 01, 03, 05, 06, and 07.