MIL-M-38510-238 Microcircuits, Digital, Mos, 4096 Bit Static Random Access Memory Ram, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, N-channel static MOS, 4096 bit random access memories. Two product assurance classes and a choice of case outlines/lead finish are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/2388

Waveforms

NOTES:

1. WE is high for a read cycle.

2. If the CS low transition occurs simultaneously with the WE low transitions, the output buffers remain in a high impedance state.

3. WE must be high during all address transitions.

4. Rise and fall times of input pulses ≤ 10 ns.

5. Input and output timing reference levels are 1.5 volts with input pulse levels of ground to 3.0 volts.

6. thz and tLZ are measured at ±500 mV from steady state with 5 pF load.

FIGURE 5. Read cycle waveforms and test conditions for device types 02 and 04 - Continued.