MIL-M-38510-238 Microcircuits, Digital, Mos, 4096 Bit Static Random Access Memory Ram, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, N-channel static MOS, 4096 bit random access memories. Two product assurance classes and a choice of case outlines/lead finish are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/2388

Waveforms

NOTES:

1. See table 1 for limits and complete terminal conditions.

2. Input and output timing reference levels are 1.5 volts with input pulse levels of ground to 3.0 volts.

3. tOW and tWZ are measured at ±500 mV from steady state with 6 pF load.

FIGURE 6. Write cycle waveforms and test conditions for device types 01, 02, 03, 04, 05, 06, and 07.