MIL-M-38510-238 Microcircuits, Digital, Mos, 4096 Bit Static Random Access Memory Ram, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, N-channel static MOS, 4096 bit random access memories. Two product assurance classes and a choice of case outlines/lead finish are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27 - 28 - 29 - 30 - 31 - 32 - 33 - 34 - 35 - 36

MIL-M-38510/2388

NOTES:

1. VCC is defined in table III.

2. Load A: R1 = 480ν ±5%; R2 = 255ν ±5%; and CL = 30 pF (including probe and jig capacitance).

3. Load 8; R1 = 480ν ±5%; R2 = 255ν ±5%; and CL = 5 pF (including probe and jig capacitance).

FIGURE 4. Dynamic load for switching tests.