MIL-M-38510-238 Microcircuits, Digital, Mos, 4096 Bit Static Random Access Memory Ram, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, N-channel static MOS, 4096 bit random access memories. Two product assurance classes and a choice of case outlines/lead finish are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/2388

NOTES:

1. VCC is defined in table III.

2. CL = 100 pF total, including probe and jig capacitance.

3. R1 = 1.8 kν ±5%, R2 = 1 kν ±5%.

FIGURE 4. Dynamic load for switching tests - Continued.