MIL-M-38510-238 Microcircuits, Digital, Mos, 4096 Bit Static Random Access Memory Ram, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, N-channel static MOS, 4096 bit random access memories. Two product assurance classes and a choice of case outlines/lead finish are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3.

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MIL-M-38510/2388

1.4 Recommended operating conditions - Continued.

Device types 06 - Continued Min Max Units

Chip select to power-up time (tPU)........................................... 0		ns
Chip select to power-down time (tPD) ......................................	30	ns
Write cycle time (tWC)............................................................... 70		ns
Pulse width, chip select to end of write (tCW)........................... 65		ns
Address valid to end of write (tAW)........................................... 65		ns
Address set-up time (tAS)................................................................... 0		ns
Pulse width, write (tWP)...................................................................... 50 Write recovery time (tWR)................................................................... 5 Data valid to end of write (tDW) .......................................................... 25 Data on hold time (tDH) ..................................................................... 0		ns ns ns ns
Write enabled to output in high-Z (tWZ) 7/ .......................................... 0 Output active from end of write (tOW) 7/............................................. 0	25	ns ns

Device type 07

Read cycle time (tRC)......................................................................... 45 Address access time (tAA)..................................................................	45	ns ns
Chip select access time (tACS1) 8/.....................................................	45	ns
Chip select access time (tACS2) 5/..................................................... Output hold time from address change (tOH) ..................................... 5 Chip select to output in low-Z (tLZ) 6/ 7/........................................... 10	55	ns ns ns
Chip deselect to output in high-Z (tHZ) 6/ 7/ ...................................... 0 Chip select to power-up time (tPU)...................................................... 0 Chip select to power-down time (tPD).................................................	30 20	ns ns ns
Write cycle time (tWC) ....................................................................... 45		ns
Pulse width, chip select to end of write (tCW) ..................................... 45 Address valid to end of write (tAW)..................................................... 45 Pulse width, write (tWP)...................................................................... 30 Data valid to end of write (tDW) .......................................................... 30 Address set-up time (tAS)................................................................... 0 Write recovery time (tWR)................................................................... 10 Data on hold time (tDH) ...................................................................... 10 Write enabled to output in high-Z (tWZ) 7 .......................................... 0	25	ns ns ns ns ns ns ns ns
Output active from end of write (tOW) 7/............................................ 0		ns

2. APPLICA8LE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications and Standards. The following specifications and standards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.