MIL-M-38510-121 Microcircuits, Linear Monolithic And Multichip, Silicon 12 Bit Digital-To-Analog ConvertersThis specification covers the detail requirements for monolithic silicon, bipolar, interface, memory core drivers. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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MIL-M-38510/121A

6.5  Abbreviations, symbols, and definitions.  The abbreviations, symbols, and definitions used herein are defined in

MIL-PRF-38535, MIL-HDBK-1331, and as follows:.

Bipolar mode:                                                                        The D/A converter operation mode that provides both positive and negative output voltage or currents in response to an offset binary input code.

Bipolar gain:                                                                          The ratio of the output voltage change to the input code change in the bipolar mode.  In this specification, it is measured as the output voltage change between the input codes of zero and

full-scale.

Bipolar gain error (BPAE):                                                      The difference between the actual static gain and the ideal static gain in the bipolar mode.  It is measured between zero and

full-scale and therefore expressed as a percent of full-scale range.

Bipolar offset error (BPOE):                                                    The difference between the actual and the ideal output voltage with the device operating in the bipolar mode and the digital inputs at zero.  It is expressed in LSB units.

Bipolar offset drift (dBPOE/dt):                                                The change of the bipolar offset with temperature with the device operating in the bipolar voltage output mode.  It is expressed in LSB/°C.

Bipolar zero error (BZE):                                                        The difference between the actual and the ideal (0 volts) output with the device operating in the bipolar mode and with the input digital code at 1000 0000 0000.  It is expressed in LSB units.

Bipolar zero drift (dBZE/dt):                                                    The change of the bipolar zero error with temperature with the device operating in the bipolar voltage output mode.  It is expressed in LSB/°C.

Differential linearity error:                                                     The difference between the actual separation of two adjacent output levels and the ideal separation of one LSB.  It is expressed in LSB.

Full-scale current (IFS):                                                          The total current output of the device with all digital inputs at logic 1.  It is expressed in mA.

Full-scale output voltage range (VFSR):                                 The output voltage change between the input codes of all zeros to all ones plus the voltage equivalent to one additional LSB.

Gain:                                                                                     The ratio of the output voltage change to an input code change with the device operating in the unipolar mode.  In this specification it is measured between the codes of zero to

full-scale.

Gain drift:                                                                              The change of gain with temperature.  It is expressed in PPM/°C. Gain error:                                                                             The difference between the actual static gain and the ideal static

gain.  It is expressed as a percent of the ideal.

Least significant bit (LSB):                                                    That bit of a digital code word that causes the least change to the output level.  When the LSB changes state, the ideal output level changes by the value of the full-scale range divided by

4096.

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