MIL-M-38510-121 Microcircuits, Linear Monolithic And Multichip, Silicon 12 Bit Digital-To-Analog ConvertersThis specification covers the detail requirements for monolithic silicon, bipolar, interface, memory core drivers. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Characteristics

Symbol

Conditions  1/ 2/ 3/

-55°C = TA = +125°C

unless otherwise specified

Device type

Limits

Unit

Min

Max

Gain error (CMOS)

AE2

Logic "1" = 10.5 V,

VCC = 15 V, TA = 25°C

5/  6/

01

-0.20

+0.20

%

02

-0.16

+0.16

Bipolar gain error

BPAE

Over ±10 V output range, TA = 25°C,     5/  6/

01, 03,

04

-0.20

+0.20

%

02

-0.16

+0.16

Gain drift

dAE1/dt

From 25°C to 125°C

and 25°C to -55°C    5/

01

-5

+5

PPM/C°

02, 03

-30

+30

04

-10

10

Reference output voltage

VREF

All logic bits logic "0",

VCC  = 15 V, VEE = -15 V

02

2.45

2.55

V

03

9.90

10.1

Bipolar offset error

BPOE

All inputs =

Logic "0"

5/  7/

TA = 25°C

01, 03,

04

-8

+8

LSB

02

-6.5

+6.5

TA = 125°C

01

-10.0

+10.0

02

-18.5

+18.5

03

-20.0

+20.0

04

-12.0

+12.0

TA = -55°C

01

-9.6

+9.6

02

-16.1

+16.1

03

-17.6

+17.6

04

-11.2

+11.2

Bipolar offset drift

dBPOE

dt

From 25°C to 125°C

and 25°C to -55°C    5/

01

-0.02

0.02

LSB/°C

02, 03

-0.12

0.12

04

-0.04

0.04

Bipolar zero error (TTL)

BZE

Input bits =

4,000 (octal)

5/

TA = 25°C

01

-6.5

6.5

LSB

02

-6.5

6.5

03, 04

-6.0

6.0

TA = 125°C

01

-8.5

+8.5

02

-10.5

+10.5

03, 04

-10.0

+10.0

TA = -55°C

01

-8.1

+8.1

02

-9.7

+9.7

03, 04

-9.2

+9.2

Bipolar zero drift

dBZE

dt

From 25°C to 125°C

and 25°C to -55°C    5/

01

-0.02

0.02

LSB/°C

02, 03,

04

-0.04

0.04