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MIL-M-38510-108 Microcircuits, Linear, Transistor Arrays, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon transistor arrays. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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TABLE lll. Group A inspection for device type 02 - Continued.

Terminal conditions (pins not designated may be H 2.0 V, or L ≤ 0.8 V, or open)

Subgroup

Symbol

Cases A,C,D

Measured terminal

Limits

Note

Test no.

CQ1

BQ1

EQ1, 2

BQ2

CQ2

BQ3

EQ3

CQ3

BQ4

EQ4

CQ4

BQ5

EQ5/

SUB

CQ5

Min

Max

Unit

TA = +25°C

hfe

177

GND

3 V/

1 mA

GND

BQ4

hfe

178

GND

3 V/

1 mA

BQ5

179

CQ1

300

MHz

180

CQ2

181

CQ3

182

CQ4

183

CQ5

TA =

+125°C

hfe

184

3 V/

1 mA

GND

BQ1

185

GND

3 V/

1 mA

BQ2

186

GND

3 V/

1 mA

BQ3

187

GND

3 V/

1 mA

BQ4

188

3 V/

1 mA

BQ5

TA = -55°C

hfe

189

3 V/

1 mA

GND

BQ1

190

GND

3 V/

1 mA

BQ2

191

GND

3 V/

1 mA

BQ3

192

GND

3 V/

1 mA

BQ4

193

3 V/

1 mA

BQ5

TA = +25°C

C.S.

194

CQ4

NOTES:

1. Adjust lb until lC = 1.1 mA, hfe = 0.1 mA/οlb

2. f = 100 MHz, measure hfe, ft = 100hfe (see figure 4)

3. See figure 3.