MIL-M-38510-108 Microcircuits, Linear, Transistor Arrays, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon transistor arrays. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Test

Symbol

Conditions

Temperature range

Device type

Limits  1/

Unit

Min

Max

Breakdown voltage,

collector to base

V(BR)CBO

IC  = 10 ∝A, IE = 0

-55°C = TA =  +125°C

01, 02

40

V

Breakdown voltage,

collector to emitter

V(BR)CEO

IC  = 1 mA, IB = 0

-55°C = TA =  +125°C

01, 02

15

V

Breakdown voltage,

collector to substrate

2/

V(BR)CUO

IC  = 10 ∝A

-55°C = TA =  +125°C

01, 02

60

V

Breakdown voltage, emitter to base   2/

V(BR)EBO

IE = 10 ∝A, IC  = 0

-55°C = TA =  +125°C

01, 02

5.0

V

Collector to base

cutoff current

ICBO

VCB = 35 V, IE = 0

-55°C = TA =  +25°C

01, 02

10

nA

TA = +125°C

0.2

∝A

Collector to emitter

cutoff current

ICEO

VCE = 10 V, IB = 0

-55°C = TA =  +25°C

01, 02

10

nA

TA = +125°C

1.0

∝A

Collector to emitter cutoff current

(Darlington pair)  3/

ICEO(D)

VCE = 10 V, IB = 0

-55°C = TA =  +25°C

01

20

nA

TA = +125°C

50

∝A

Collector to substrate

cutoff current  2/

ICUO

VCU  = 40 V

-55°C = TA =  +25°C

01, 02

10

nA

TA = +125°C

200

Emitter to base cutoff

current

IEBO

VEB = 4 V, IC  = 0

-55°C = TA =  +25°C

01, 02

10

nA

TA = +125°C

200

Collector to emitter

voltage (saturated)

VCE(sat)

IC  = 10 mA, IB = 1 mA

-55°C = TA =  +25°C

01, 02

0.400

V

TA = +125°C

0.600

Base emitter voltage

(saturated)

VBE(sat)

IC  = 10 mA, IB = 1 mA

+25°C = TA =  +125°C

01, 02

1.0

V

TA = -55°C

1.1

Base emitter voltage

(unsaturated)

VBE

VCE = 3 V, IE = -1 mA

TA = +25°C

01, 02

0.600

0.800

V

TA = +125°C

0.450

0.650

TA = -55°C

0.750

0.950

Base emitter voltage

(unsaturated)

VBE

VCE = 3 V, IE = -10 mA

TA = +25°C

01, 02

0.900

V

TA = +125°C

0.750

TA = -55°C

1.000

Base emitter voltage

(unsaturated), Darlington pair  3/

VBE(D)

VCE = 3 V, IE = -1 mA

TA = +25°C

01

1.100

1.500

V

TA = +125°C

0.700

1.100

TA = -55°C

1.500

1.900

Base emitter voltage

(unsaturated), Darlington pair  3/

VBE(D)

VCE = 3 V, IE = -10 mA

TA = +25°C

01

1.600

V

TA = +125°C

1.200

TA = -55°C

2.00

Input offset voltage,

differential pair  4/

IVBEQ1  - VBEQ2I

VCE = 3 V, IE = -1 mA

TA = +25°C

01, 02

2.0

mV

-55°C = TA = +125°C

3.0

Input offset voltage for pairs of isolated

transistors   5/ 6/ 7/

IVBEQA - VBEQBI

VCE = 3 V, IE = -1 mA

TA = +25°C

01, 02

2.0

mV

-55°C = TA = +125°C

3.0