MIL-M-38510-108 Microcircuits, Linear, Transistor Arrays, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon transistor arrays. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Subgroup

Symbol

Cases

A,C,D

1

2

3

4

5

6

7

8

9

10

11

12

13

14

Measured terminal

Limits

Note

Case

M

-

3

4

5

6

7

8

-

9

10

11

12

1

2

Min

Max

Unit

Test no.

NC

BQ2

EQ2

CQ2

BQ1

EQ1

CQ1

NC

BQ3

SUB

CQ3

CQ4

EQ4

BQ4/

EQ3

3

TA  = -55°C

VBE

115

IB

GND

3 V

GND/

-1 mA

BQ3

0.750

0.950

V

"

116

"

3 V

GND/

-1 mA

IB

BQ4

0.750

0.950

"

"

117

IB

GND/

-10 mA

3 V

"

BQ1

1.000

"

"

118

IB

GND/

-10 mA

3 V

"

BQ2

"

"

"

119

IB

"

3 V

GND/

-10 mA

BQ3

"

"

"

120

"

3 V

GND/

-10 mA

IB

BQ4

"

"

VBE(D)

121

IB

"

3 V

3 V

GND/

-1 mA

BQ3

1.500

1.900

"

VBE(D)

122

IB

"

3 V

3 V

GND/

-10 mA

BQ3

2.000

"

IVBEQ1  - VBEQ2I

123

GND

-

3.0

mV

1

VBE/T

124

"

-

-2.2

-1.5

mV/°C

2

"

125

"

-

"

"

"

3

"

126

"

-

"

"

"

4

"

127

"

-

"

"

"

5

VBE(D)/T

128

"

-

-5.0

-3.5

"

6

(IVBEQ1  - VBEQ2I)/T

129

"

-

"

15.0

∝V/°C

7

hFEQ1

130

IB

GND

3 V/

1 mA

"

BQ1

40

8

hFEQ2

131

IB

GND

3 V/

1 mA

"

BQ2

40

8

hFEQ1/ hFEQ2

132

"

-

0.85

1.15

9