MIL-M-38510-108 Microcircuits, Linear, Transistor Arrays, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon transistor arrays. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Test

Symbol

Conditions

Temperature range

Device type

Limits  1/

Unit

Min

Max

Temperature

coefficient of base emitter voltage

5/ 8/

VBE/T

VCE = 3 V, IE = -1 mA

-55°C = TA =  +25°C

01

-2.2

-1.5

mV/°C

02

-2.2

-1.3

+25°C = TA =  +125°C

01

-2.2

-1.5

02

-2.2

-1.3

Temperature

coefficient of base emitter voltage, Darlington pair

3/ 8/

VBE(D)/T

VCE = 3 V, IE = -1 mA

-55°C = TA =  +25°C

01

-5.0

-3.5

mV/°C

+25°C = TA =  +125°C

-5.0

-3.5

Temperature

coefficient of input offset voltage 5/  9/

(IVBEQA - VBEQBI)/T

VCE = 3 V, IE = -1 mA

-55°C = TA = +25°C

01, 02

15

∝V/°C

+25°C = TA = +125°C

15

Static forward

current transfer ratio (beta)

hFE

VCE = 3 V, IC  = 10 ∝A

+25°C = TA = +125°C

01, 02

45

TA = -55°C

25

Static forward current transfer

ratio (beta)

hFE

VCE = 3 V, IC  = 1 mA

+25°C = TA = +125°C

01

70

300

TA = -55°C

40

+25°C = TA = +125°C

02

70

TA = -55°C

40

Static forward

current transfer ratio (beta)

hFE

VCE = 3 V, IC  = 10 mA

+25°C = TA = +125°C

01, 02

60

TA = -55°C

35

Magnitude of static

beta ratio for any two isolated transistors  5/ 6/ 7/

hFEQA/hFEQB

VCE = 3 V, IC  = 1 mA

TA = +25°C

01, 02

0.9

1.1

-55°C = TA = +125°C

0.85

1.15

Static forward

current transfer ratio, Darlington pair   3/

hFE(D)

VCE = 3 V, IC  = 1 mA

+25°C = TA = +125°C

01

4000

TA = -55°C

2500

Static forward

current transfer ratio, Darlington pair   3/

hFE(D)

VCE = 3 V, IC  = 100

∝A

+25°C = TA = +125°C

01

2500

TA = -55°C

1500

Low frequency, small signal,

forward current transfer ratio

hfe

VCE = 3 V, IC  = 1 mA

TA = -55°C

01, 02

35

+25°C = TA = +125°C

60

Gain-bandwidth

product

ft

See figure 4

TA = +25°C

01, 02

300

MHz

Delay time

td

See figure 2

TA = +25°C

01, 02

100

ns

TA = -55°C, +125°C

160

Rise time

tr

See figure 2

TA = +25°C

01, 02

50

ns

TA = -55°C, +125°C

80

Storage time

ts

See figure 2

TA = +25°C

01, 02

200

ns

TA = -55°C, +125°C

300