MIL-M-38510-108 Microcircuits, Linear, Transistor Arrays, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon transistor arrays. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Subgroup

Symbol

Cases A,C,D

1

2

3

4

5

6

7

8

9

10

11

12

13

14

Measured terminal

Limits

Note

Test no.

CQ1

BQ1

EQ1, 2

BQ2

CQ2

BQ3

EQ3

CQ3

BQ4

EQ4

CQ4

BQ5

EQ5/

SUB

CQ5

Min

Max

Unit

3

TA  = -55°C

VBE(sat)

137

10 mA

1 mA

GND

GND

BQ1

1.100

V

"

138

GND

1 mA

10 mA

"

BQ2

"

"

"

139

1 mA

GND

10 mA

"

BQ3

"

"

"

140

1 mA

GND

10 mA

"

BQ4

"

"

"

141

1 mA

"

10 mA

BQ5

"

"

VBE

142

3 V

IB

GND/

-1 mA

"

BQ1

0.750

0.950

"

"

143

GND/

-1 mA

IB

3 V

"

BQ2

"

"

"

"

144

IB

GND/

-1 mA

3 V

"

BQ3

"

"

"

"

145

IB

GND/

-1 mA

3 V

"

BQ4

"

"

"

"

146

IB

GND/

-1 mA

3 V

BQ5

"

"

"

"

147

3 V

IB

GND/

-10 mA

GND

BQ1

1.000

"

"

148

GND/

-10 mA

IB

3 V

"

BQ2

"

"

"

149

IB

GND/

-10 mA

3 V

"

BQ3

"

"

"

150

IB

GND/

-10 mA

3 V

"

BQ4

"

"

"

151

IB

GND/

-10 mA

3 V

BQ5

"

"

IVBEQ1  - VBEQ2I

152

GND

--

3.0

mV

1

IVBEQ1  - VBEQ3I

153

"

--

"

"

2

IVBEQ1  - VBEQ4I

154

"

--

"

"

3

IVBEQ1  - VBEQ5I

155

"

--

"

"

4

VBE/T

156

"

--

-2.2

-1.3

mV/°C

5

"

157

"

--

"

"

"

6

"

158

"

--

"

"

"

7

"

159

"

--

"

"

"

8

"

160

"

--

"

‘

"

9