MIL-M-38510-108 Microcircuits, Linear, Transistor Arrays, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon transistor arrays. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Subgroup

Symbol

Cases

A,C,D

1

2

3

4

5

6

7

8

9

10

11

12

13

14

Measured terminal

Limits

Note

Case

M

-

3

4

5

6

7

8

-

9

10

11

12

1

2

Min

Max

Unit

Test no.

NC

BQ2

EQ2

CQ2

BQ1

EQ1

CQ1

NC

BQ3

SUB

CQ3

CQ4

EQ4

BQ4/

EQ3

2

TA  =

+125°C

IVBEQ1  - VBEQ2I

99

GND

-

3.0

mV

1

VBE/T

100

"

-

-2.2

-1.5

mV/°C

2

"

101

"

-

"

"

"

3

"

102

"

-

"

"

"

4

"

103

"

-

"

"

"

5

VBE(D)/T

104

"

-

-5.0

-3.5

"

6

(IVBEQ1  - VBEQ2I)/T

105

"

-

"

15.0

∝V/°C

7

hFEQ1

106

IB

GND

3 V/

1 mA

"

BQ1

70

300

8

hFEQ2

107

IB

GND

3 V/

1 mA

"

BQ2

70

300

8

hFEQ1/ hFEQ2

108

"

-

0.85

1.15

9

3

TA  = -55°C

VBE(sat)

109

1 mA

GND

10 mA

"

BQ1

1.100

V

"

110

1 mA

GND

10 mA

"

BQ2

"

"

111

1 mA

"

10 mA

GND

BQ3

"

"

112

"

10 mA

GND

1 mA

BQ4

"

VBE

113

IB

GND/

-1 mA

3 V

"

BQ1

0.750

0.950

V

"

114

IB

GND/

-1 mA

3 V

"

BQ2

0.750

0.950

"