MIL-M-38510-108 Microcircuits, Linear, Transistor Arrays, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon transistor arrays. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Subgroup

Symbol

Cases A,C,D

1

2

3

4

5

6

7

8

9

10

11

12

13

14

Measured terminal

Limits

Note

Test no.

CQ1

BQ1

EQ1, 2

BQ2

CQ2

BQ3

EQ3

CQ3

BQ4

EQ4

CQ4

BQ5

EQ5/

SUB

CQ5

Min

Max

Unit

2

TA  = +125°C

ICEO

87

10 V

GND

GND

CQ1

1.0

∝A

"

88

GND

10 V

"

CQ2

"

"

"

89

GND

10 V

"

CQ3

"

"

"

90

GND

10 V

"

CQ4

"

"

"

91

"

10 V

CQ5

"

"

ICUO

92

40 V

"

CQ1

200

"

"

93

40 V

"

CQ2

"

"

"

94

40 V

"

CQ3

"

"

"

95

40 V

"

CQ4

"

"

IEBO

96

GND

4 V

"

EQ1

"

"

"

97

4 V

GND

"

EQ2

"

"

"

98

GND

4 V

"

EQ3

"

"

"

99

GND

4 V

"

EQ4

"

"

VCE(sat)

100

10 mA

1 mA

GND

"

CQ1

0.600

V

"

101

GND

1 mA

10 mA

"

CQ2

"

"

"

102

1 mA

GND

10 mA

"

CQ3

"

"

"

103

1 mA

GND

10 mA

"

CQ4

"

"

"

104

1 mA

"

10 mA

CQ5

"

"

VBE

105

3 V

IB

GND/

-1 mA

"

BQ1

0.450

0.650

"

"

106

GND/

-1 mA

IB

3 V

"

BQ2

"

"

"

"

107

IB

GND/

-1 mA

3 V

"

BQ3

"

"

"

"

108

IB

GND/

-1 mA

3 V

"

BQ4

"

"

"

"

109

IB

GND/

-1 mA

3 V

BQ5

"

"

"

"

110

3 V

IB

GND/

-10 mA

GND

BQ1

0.750

"

"

111

GND/

-10 mA

IB

3 V

"

BQ2

"

"

"

112

IB

GND/

-10 mA

3 V

"

BQ3

"

"

"

113

IB

GND/

-10 mA

3 V

"

BQ4

"

"