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MIL-M-38510-108 Microcircuits, Linear, Transistor Arrays, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon transistor arrays. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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TABLE lll. Group A inspection for device type 01 - Continued.

Terminal conditions (pins not designated may be H 2.0 V, or L ≤ 0.8 V, or open)

Subgroup

Symbol

Cases

A,C,D

Measured terminal

Limits

Note

Case

Min

Max

Unit

Test no.

BQ2

EQ2

CQ2

BQ1

EQ1

CQ1

BQ3

SUB

CQ3

CQ4

EQ4

BQ4/

EQ3

TA = -55°C

hFE(D)

133

GND

CQ4

3 V/

1 mA

GND

BQ3

2500

hFE(D)

134

CQ4

3 V/

100 ∝A

GND

BQ3

1500

TA = 25°C

hFE

135

GND

3 V/

1 mA

BQ1

hFE

136

GND

3 V/

1 mA

BQ2

137

CQ1

300

MHz

138

CQ2

139

CQ3

140

CQ4

TA =

+125°C

hfe

141

GND

3 V/

1 mA

GND

BQ1

hfe

142

GND

3 V/

1 mA

BQ2

TA = -55°C

hfe

143

GND

3 V/

1 mA

BQ1

hfe

144

GND

3 V/

1 mA

BQ2

NOTES:

10. hFE(D) = 1 mA/lBQ3 13. hfe = 0.1 mA/οlb

11. hFE(D) = 100 μA/lBQ3 14. f = 100 MHz, measure hfe,

12. Adjust lb until lC = 1.1 mA ft = 100 hfe (see figure 4)