MIL-M-38510-108 Microcircuits, Linear, Transistor Arrays, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon transistor arrays. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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Subgroup

Symbol

Cases

A,C,D

1

2

3

4

5

6

7

8

9

10

11

12

13

14

Measured terminal

Limits

Note

Case

M

-

3

4

5

6

7

8

-

9

10

11

12

1

2

Min

Max

Unit

Test no.

NC

BQ2

EQ2

CQ2

BQ1

EQ1

CQ1

NC

BQ3

SUB

CQ3

CQ4

EQ4

BQ4/

EQ3

1

TA  =+25°C

VBE

47

IB

GND/

-10 mA

3 V

GND

BQ2

0.900

V

48

IB

"

3 V

GND/

-10 mA

BQ3

"

"

49

"

3 V

GND/

-10 mA

IB

BQ4

"

"

VBE(D)

50

IB

"

3 V

3 V

GND/

-1 mA

BQ3

1.100

1.500

"

VBE(D)

51

IB

"

3 V

3 V

GND/

-1 mA

BQ3

1.600

"

IVBEQ1  -VBEQ2I

52

"

-

2.0

mV

1

hFE

53

IB

GND

3 V/

10 ∝A

"

BQ1

45

2

54

IB

GND

3 V/

10 ∝A

"

BQ2

"

2

55

IB

"

3 V/

10 ∝A

GND

BQ3

"

2

56

"

3 V/

10 ∝A

GND

IB

BQ4

"

2

57

IB

GND

3 V/

1 mA

"

BQ1

70

300

3

58

IB

GND

3 V/

1 mA

"

BQ2

"

"

3

59

IB

"

3 V/

1 mA

GND

BQ3

"

"

3

60

"

3 V/

1 mA

GND

IB

BQ4

"

"

3

61

IB

GND

3 V/

10 mA

"

BQ1

60

4

62

IB

GND

3 V/

10 mA

"

BQ2

"

4

63

IB

"

3 V/

10 mA

GND

BQ3

"

4

64

"

3 V/

10 mA

GND

IB

BQ4

"

4

hFEQ1/hFEQ2

65

"

-

0.9

1.1

5

hFE(D)

66

IB

"

CQ4

3 V/

100 ∝A

GND

BQ3

2500

6

hFE(D)

67

IB

"

CQ4

3 V/

1 mA

GND

BQ3

4000

7

1.

Calculate IV42 - V43I

3.

Calculate hFE = 1 mA/IB

5.

Calculate hFE(57)/hFE(58)

7.

Calculate hFE(D)  = 1 mA/IB

2.

Calculate hFE = 10 μA/IB

4.

Calculate hFE = 10 mA/IB

6.

Calculate hFE(D)  = 100 μA/IB