MIL-M-38510/108A
1.3 Absolute maximum ratings. 1/
Collector - base voltage ............................................................ 40 V dc 2/ Collector - emitter voltage.......................................................... 15 V dc 2/ Collector - substrate voltage .................................................... 60 V dc 3/ Emitter - base voltage ............................................................... 5 V dc 2/ Power dissipation ..................................................................... 300 mW 2/ Collector current ........................................................................ 50 mA 2/ Storage temperature range ....................................................... -65°C to +150°C Junction temperature ............................................................... +175°C
Lead temperature (soldering, 60 seconds) ................................ +300°C
1.4 Recommended operating conditions.
Collector - base voltage ............................................................ 32 V dc 2/ Collector - emitter voltage.......................................................... 12 V dc 2/
Ambient operating temperature range ....................................... -55°C ≤ TA ≤ +125°C
1.5 Power and thermal characteristics.
Case outline Maximum allowable power dissipation Maximum εJC Maximum εJA
A, D, M |
350 mW @ TA = 125°C |
60°C/W |
140°C/W |
C |
400 mW @ TA = 125°C |
40°C/W |
120°C/W |
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications and standards. The following specifications and standards form a part of this specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 - Test Method Standard for Microelectronics.
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.
(Copies of these documents are available online at https://assist.daps.dla.mil;qu/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.
2.3 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein the text of this document shall takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
1/ The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2/ Rating applies to each transistor within the array.
3/ Does not apply to Q5 of device type 02, refer to VCEO rating.
2
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