MIL-M-38510/175C
3.6 Electrical test requirements. The electrical test requirements for each device class shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table III.
3.7 Marking. Marking shall be in accordance with MIL-PRF-38535.
3.7.1 Radiation hardness assurance identifier. The radiation hardness assurance identifier shall be in accordance with MIL-PRF-38535 and 4.5.4 herein.
3.8 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 38 (see MIL-PRF-38535, appendix A).
4. VERIFICATION
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein.
4.2 Screening. Screening shall be in accordance with MIL-PRF-38535 and shall be conducted on all devices prior to qualification and conformance inspection. The following additional criteria shall apply:
a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883.
b. Delete the sequence specified as interim (pre-burn-in) electrical parameters through interim (post-burn-in)
electrical parameters of table IA of MIL-PRF-38535 and substitute lines 1 through 7 of table II herein.
c. Burn-in (method 1015 of MIL-STD-883).
(1) Unless otherwise specified in the manufacturers QM plan for static tests (test condition A), ambient temperature (TA) shall be +125°C minimum. Test duration for each static test shall be 24 hours minimum for class S devices and in accordance with table I of method 1015 for class B devices.
i. For static burn-in I, all inputs shall be connected to 0.0 V.
ii. For static burn-in II, all inputs shall be connected to VDD. VDD = 15 V minimum and 18 V
maximum.
iii. Except for VDD and VSS, the terminal shall be connected through resistors whose value is
2 kν to 47 kν. The actual measured value of the resistor selected shall not exceed ±20% of its branded value due to use, heat or age.
iv. Output may be open or connected to VDD/2.
v. Terminals 2 and 14 shall each be connected to VDD through separate 2 kν to 47 kν
resisitors. This requirement is only applicable to device type 04.
(2) Unless otherwise specified in the manufacturers QM plan for dynamic test (test condition D), ambient temperature shall be +125°C minimum. Test duration shall be in accordance with table I of method 1015.
i. Except for VDD and VSS, the terminals shall be connected through resistors whose value is
2 kν to 47 kν. The actual measured value of the resistor selected shall not exceed ±20% of its branded value due to use, heat or age.
ii. Input signal requirements: Square wave, 50% duty cycle; 25 kHz < PRR < 1 MHz; tTLH and tTHL < 1 μs. Voltage level: 0 to 15 V minimum to 18 V maximum peak.
iii. For device type 05, positive transition of F occurs at center of F/2. d. Interim and final electrical test parameters shall be as specified in table II.
e. For class S devices, post dynamic burn-in, or class B devices, post static burn-in, electrical parameter measurements may, at the manufacturer's option, be performed separately or included in the final electrical parameter requirements.
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