MIL-M-38510-653 Microcircuits, Digital, High Speed, Cmos Flip-Flops, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, high speed CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part or identifying number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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MIL-M-38510/653B

4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535.

4.4 Technology Conformance inspection (TCI). Technology conformance inspection shall be in accordance with MIL- PRF-38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4).

4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows:

a. Tests shall be performed in accordance with table II herein. b. Subgroups 5 and 6 shall be omitted.

c. Subgroup 4 (CIN, CO, and CC measurements) shall be measured only for initial qualification and after process

or design changes that may affect input capacitance. Capacitance shall be measured between the designated

terminal and GND at a frequency of 1 MHz.

d. Subgroups 9 and 11 shall be measured only for initial qualification and after process or design changes which may affect dynamic performance.

4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535.

4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows:

a. End-point electrical parameters shall be as specified in table II herein. Delta limits shall apply only to subgroup

1 of group C inspection and shall consist of tests specified in table IV herein.

b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883.

4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End-point electrical parameters shall be as specified in table II herein.

4.5 Methods of inspection. Methods of inspection shall be specified and as follows:

4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND

terminal. Currents given are conventional current and positive when flowing into the referenced terminal.

4.5.2 Burn-in and life test cool down procedures. When the burn-in and life tests are completed and prior to removal of bias voltages, the devices under test (DUT) shall be cooled to within 10°C of their power stable condition at room temperature; then, electrical parameter end-point measurements shall be performed.

TABLE IV. Delta limits at 25°C.

Parameter 1/	Device types
	All
ICC		±30 nA

1/ The above parameters shall be recorded before and after the required burn-in and life tests to determine deltas (�).

4.5.3 Quiescent supply current (ICC test). When performing quiescent supply current measurements (ICC), the meter shall be placed so that all currents flow through the meter.