MIL-M-38510-206 Microcircuit, Digital, 4096 Bit Schottky, Bipolar, Programmable Read-Only Memory PromThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W or titanium tungsten TiW as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. A special test requirement is included in this specification to screen against devices which may contain excess moisture in the package materials or internal atmosphere see freeze-out test of 4.2d. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/206D

TABLE IVD. Programming characteristics for circuit D.

Parameter	Symbol	Conditions 1/	Limits 1/			Unit
Parameter	Symbol	Conditions 1/	Min	Rec	Max	Unit
VCC required during programming	VCCP		4.75	5.0	5.25	V
Verification VCC read	VCCL	Programming read verify	4.2	4.4	5.0	V
Input voltage high level "1"	VIH	Do not leave inputs open	2.4	5.0	5.0	V
Input voltage low level "0"	VIL	Do not leave inputs open	0	0	0.4	V
Chip enable	CE1, CE2	Pin 8 or 10 or both	2.4	5.0	5.0	V
Output programming voltage	VOUT	Applied to ouput to be programmed	20	20.5	21	V
Output programming current	IOUT	If pulse generator is used, set current limit to the max value			100	mA
Programming voltage transition time	tTLH		0.5	1.0	3.0	µs
Programming pulse width	tP		50	100	180	µs
Programming duty cycle	D. C.	Maximum duty cycle to maintain TC < +85°C		20	20	%
Required delay between disabling memory output and application of output programming pulse	tD		30			ns

1/ Recommended TC = +25°C; maximum TC = +85°C.

4.8 Programming procedure for circuit B. The programming characteristics in table IVB and the following procedures shall be used for programming the device:

a. Connect the device in the electrical configuration for programming. The waveforms on figure 6B and the programming characteristics of table IVB shall apply to these procedures.

b. Apply VIH to CE 1 and the binary address of the PROM word to be programmed. Raise VCC to VCCP.

c. After a tD delay, apply only one VOP to the output to be programmed high. Apply Vop to one output at a time.

d. After a tD delay, a pulse CE 1 to a VIL level for a duration of tP.

e. After tP and a tD delay, remove VOP from the programmed output.

f. Other bits in the same word may be programmed sequentially while the VCC input is at the VCCP level by applying VOP pulses to each output to be programmed and pulsing CE 1 to the VIL level, allowing for proper delays between VOP and CE 1.

g. Repeat 4.8b through 4.8e for all bits to be programmed.