MIL-M-38510-206 Microcircuit, Digital, 4096 Bit Schottky, Bipolar, Programmable Read-Only Memory PromThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W or titanium tungsten TiW as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. A special test requirement is included in this specification to screen against devices which may contain excess moisture in the package materials or internal atmosphere see freeze-out test of 4.2d. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/2060

10/ For uprogrammed devices, apply 10.5 V on A2 and A5 for circuit G devices.

11/ For unprogrammed devices, apply 0 V on this pin for circuit G devices.

12/ For unprogrammed devices, apply 3 V on this pin for circuit G devices.

13/ At the manufacturer's option, this may be performed with VIH = 5.5 and test limits of 50 µA maximum.

14/ For unprogramed 04 devices, apply 10.0 V on pin 17 (A7), apply 0.5 V on pins 1, 2, 3, 15, 16, (A4, A5, A6, A8, A9)

and 5.0 V on all other addresses for circuit C.

15/ The limits shall be as follows:

16/ For circuit B devices apply 2.4 V.

17/ For circuit B devices, type 01 and 02, tPHL1, tPLH1 = 70 ns and tPHL2, tPLH2 = 30 ns.

18/ IOL = 8 mA for circuit A only.