MIL-M-38510-206 Microcircuit, Digital, 4096 Bit Schottky, Bipolar, Programmable Read-Only Memory PromThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W or titanium tungsten TiW as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. A special test requirement is included in this specification to screen against devices which may contain excess moisture in the package materials or internal atmosphere see freeze-out test of 4.2d. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/206D

TABLE IVB. Programming characteristics for circuit B.

Parameter	Symbol	Conditions	Limits 1/			Unit
Parameter	Symbol	Conditions	Min	Rec	Max	Unit
VCC required during programming	VCCP		11.5	11.75	12.0	V
VOUT current limit during programming	IOP		20	25	30	mA
Output programming voltage	VOUT		10.5	11.0	11.5	V
Pulse width of programming voltage	tP		9	10	11	µs
Programming delay	tD		0	1	10	µs
VCCP or VOUT transition time	tTLH	Rise time of VCC or VOUT	1	5	10	v/µs
VCCP current	ICCP		800	1200		mA
Low VCC for verification	VCCL		4.2	4.3	4.4	V
High VCC for verification	VCCH		5.8	6.0	6.2	V
Address input voltage	VIH		2.4	3.0	5.5	V
Address input voltage	VIL		0.0	0.0	0.5	V
Maximum duty cycle during automatic programming of program pin and output pin	D. C.	tP/ tC	---	25	25	%

1/ TA = +25°C.