MIL-M-38510-206 Microcircuit, Digital, 4096 Bit Schottky, Bipolar, Programmable Read-Only Memory PromThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W or titanium tungsten TiW as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. A special test requirement is included in this specification to screen against devices which may contain excess moisture in the package materials or internal atmosphere see freeze-out test of 4.2d. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27 - 28 - 29 - 30 - 31 - 32 - 33 - 34 - 35 - 36 - 37 - 38 - 39 - 40 - 41

MIL-M-38510/2060

NOTES:

1. Test table for devices programmed in accordance with an altered item drawing may be replaced by the equivalent tests which apply to the specific program configuration for the resulting read-only memory.

2. CL = 30 pF minimum, including jig and probe capacitance, R1 =330n ±25%, and R2 = 680n ±20%.

3. Outputs may be under load simultaneously.

FIGURE 5 Switching time test circuit, device types 03.