MIL-M-38510-206 Microcircuit, Digital, 4096 Bit Schottky, Bipolar, Programmable Read-Only Memory PromThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, tungsten W or titanium tungsten TiW as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. A special test requirement is included in this specification to screen against devices which may contain excess moisture in the package materials or internal atmosphere see freeze-out test of 4.2d. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-385101206D

11  The functional tests shall verify that no fuses are blown for unprogrammed devices or that the truth table specified in the altered item drawing exists for programmed devices (see 3.3.2).  All bits shall be tested.  Terminal conditions shall be as follows:

a.        Inputs: H = 3.0 V, L = 0.0 V. b.        Outputs:

H � 1.0 V and L ≤ 1.0 V.

c.     The functional tests shall be performed with VCC  = 4.5 and  VCC  = 5.5 V.

21  GALPAT (PROGRAMMED PROM)

This program will test all bits in the array, the addressing and interaction between bits for ac performance tPLH1. Each bit in the pattern is fixed by being programmed with a "H" and "L".

Description:

1.       Word 0 is read.

2.       Word 1 is read.

3.       Word 0 is read

4.       Word 2 is read.

5.       Word 0 is read.

6.        The reading procedure continues back and forth between word 0 and the next higher numbered word until word 1023 is reached, then increments to the next word and reads back and forth as in steps 1 through 6

shall include all words.

7.       Pass execution time = (n2 + n) x cycle time.  N = 1024.

8.       The GALPAT tests shall be performed with VCC  = 4.5 and 5.5 V.

31  SEQUENTIAL TEST (PROGRAMMED PROM)

This program will test all bits in the array for tPHL2 and tPLH2. Description

1.       Each word in the pattern is tested from the enable lines to the output lines for recovery.

2.       Each 0 is addressed.  Enable line is pulled HI to LO and LO to HI.  tPHL2  and tPLH2  are read.

3.       Word 1 is addressed.  Same enable sequence as above.

4.       The reading procedure continues until word 1023 is reached.

5.       Pass execution time = 1024 x cycle time.

6.       The sequential tests shall be performed with VCC  = 4.5  and 5.5 V.

41  The outputs are loaded per figure 6.

5/ For unprogrammed devices (circuit A), apply 11.0 V on pin 1 (A6) for device types 01 and 03.  Apply 11.0 V on pin

1 (A6) for device type 02 with date codes prior to 8225, and apply 13.0 V on pin 1 (A6) for device type 02 with date

codes after and including 8226.

61  For unprogrammed devices, apply 12.0 V on pin 17 (A7) for circuit B devices.

71  For unprogrammed 02 devices, apply 10.0 V on pin 17 (A7), apply 0.5 V on pins 3, 2, 1, 16, 15 (A4, A5, A6, A8, A9)

and 5.0 V on all other addresses for circuit C.

81  For unprogrammed devices, apply 12.0 V on terminals A2  and A9  for circuit D devices.

91  For programmed devices, select an appropriate address to acquire the desired output state.  VIH  = 2.0 V, VIL = 0.8

V.

31