MIL-M-38510-757 Microcircuits, Digital, Advanced Cmos, Buffer Gates, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance RHA are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27

MIL-M-38510/757C

TABLE III.  Delta limits at 25°C.

1/  The above parameters shall be recorded before and

after the required burn-in and life tests to determine deltas ().

4.4.3  Group C inspection.  Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows:

a.  End-point electrical parameters shall be as specified in table II herein.  Delta limits shall apply only to subgroup 1 of group C inspection and shall consist of tests specified in table III herein.

b.  The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535.  The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request.  The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883.

4.4.4  Group D inspection.  Group D inspection shall be in accordance with table V of MIL-PRF-38535.  End-point electrical parameters shall be as specified in table II herein.

4.4.5  Group E inspection.  Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.7 herein).  RHA levels for device classes B and S shall be as specified in MIL-PRF-38535.

a.  End-point electrical parameters shall be as specified in table II herein.

b.  For device classes B and S, subgroups 1 and 2 in table V, method 5005 of MIL-STD-883 shall be tested as appropriate for device construction.

c.   When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.

d.  RHA tests for device classes B and S for levels M, D, P, L,  R, and F shall be performed through each level to determine at what levels the devices meet the RHA requirements.  These RHA tests shall be performed for initial qualification and after design or process changes which may affect the RHA performance of the devices.

e.  Prior to irradiation, each selected sample shall be assembled in its qualified package.  It shall pass the specified group A electrical parameters in table I for subgroups specified in table II herein.

f.   For device classes B and S, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested.  All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25°C ±5°C, after exposure, to the subgroups specified in table II herein.

23