MIL-M-38510-757 Microcircuits, Digital, Advanced Cmos, Buffer Gates, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance RHA are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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MIL-M-38510/757C

1.2.3  Case outlines.  The case outlines should be as designated in MIL-STD-1835 and as follows:

Outline letter                     Descriptive designator                             Terminals                        Package style

1.3  Absolute maximum ratings.  1/ 2/

Supply voltage range (VCC)......................................................................................... -0.5 V dc to +6.0 V dc

DC input voltage range (VIN)....................................................................................... -0.5 V dc to VCC  +0.5 V dc

DC output voltage range (VOUT).................................................................................. -0.5 V dc to VCC  + 0.5 V dc

Clamp diode current (IIK, IOK) ...................................................................................... ±20 mA DC output current (IOUT).............................................................................................. ±50 mA DC VCC  or GND current (ICC, IGND) .............................................................................. ±100 mA

Storage temperature range (TSTG) .............................................................................. -65°C to +150°C Maximum power dissipation (PD) ................................................................................ 500 mW

Lead temperature (soldering, 10 seconds) ................................................................. +300°C

Thermal resistance, junction-to-case (εJC)................................................................. See MIL-STD-1835

Junction temperature (TJ) ........................................................................................... +175°C

Case operating temperature (TC)................................................................................ -55°C to +125°C

1.4  Recommended operating conditions. 2/ 3/ 4/

Supply voltage range (VCC)......................................................................................... +3.0 V dc to +5.5 V dc Input voltage range (VIN)............................................................................................. +0.0 V dc to VCC Output voltage range (VOUT) ....................................................................................... +0.0 V dc to VCC

Case operating temperature range (TC)...................................................................... -55°C to +125°C

Input low (VIL) maximum voltage ................................................................................ 0.90 V dc at VCC  = 3.0 V dc

1.35 V dc at VCC  = 4.5 V dc

1.65 V dc at VCC  = 5.5 V dc

Input high (VIH) minimum voltage................................................................................ 2.10 V dc at VCC  = 3.0 V dc

3.15 V dc at VCC  = 4.5 V dc

3.85 V dc at VCC  = 5.5 V dc

Input rise and fall rate (tr, tf) maximum:

(device types 01, 03, 04, 05 and 11), VCC  = 3.6 V, VCC  = 5.5 V ............................... 8 ns/V

1.5  Radiation features.

Maximum total dose available (dose rate = 50 - 300 rads (Si)/s):

Device types 04, and 11 ........................................................................................   100 krads (Si) Device types 01, 02, 03. and 05 ............................................................................   300 krads (Si)

1/  Stresses above the absolute maximum rating may cause permanent damage to the device.  Extended operation at the maximum levels may degrade performance and affect reliability.  The maximum junction temperature may be exceeded for allowable short duration burn-in screening conditions in accordance with MIL-PRF-38535.

2/  Unless otherwise noted, all voltages are referenced to GND.

3/  Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems.  Data retention implies no input transitions and no stored data loss with the following conditions:  VIH  70 percent of VCC, VIL  ≤ 30 percent of VCC, VOH  70 percent of VCC  at -20 μA, VOL  ≤ 30 percent of VCC at 20 μA.

4/  Unless otherwise specified, the values listed above shall apply over the full VCC  and TC  recommended operating range.

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