MIL-M-38510-757 Microcircuits, Digital, Advanced Cmos, Buffer Gates, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance RHA are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

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Test and

MIL-STD-883 test method

Symbol

Test Conditions  11

-55−C = TC  = +125−C

+3.0 V = VCC  = +5.5 V

unless otherwise specified

Device type  21

VCC

Group A

subgroups

Limits  11

Unit

Min

Max

Three-state output leakage current low

3020

IOZL

41  51

71

VOUT  = GND

03-05

10, 11

5.5 V

1, 3

-0.5

∝A

2

-10.0

M

03-05, 11

1

-1.0

D

-3.0

P, L, R

-20.0

F

03, 05

-20.0

Three-state output leakage current high

3021

IOZH

41  51

71

VOUT  = VCC

03-05

10, 11

5.5 V

1, 3

0.5

∝A

2

10.0

M

03-05, 11

1

1.0

D

3.0

P, L, R

20.0

F

03, 05

20.0

Positive-going threshold voltage

3006

VT+

41  51

81

For input under test

VIN  = GND

All other inputs

02

3.0 V

1, 2, 3

0.9

2.2

V

4.5 V

1.35

3.2

5.5 V

1.65

3.9

at VCC  or GND

M

02

3.0 V

1

0.9

2.2

5.5 V

1.65

3.9

D

3.0 V

0.9

2.2

5.5 V

1.65

3.9

P, L, R, F

3.0 V

0.9

2.2

5.5 V

1.65

3.9

Negative-going threshold

voltage

3006

VT-

41  51

91

For input under test

VIN  = GND

All other inputs

02

3.0 V

1, 2, 3

0.5

2.1

V

4.5 V

0.9

3.15

5.5 V

1.1

3.85

at VCC  or GND

M

02

3.0 V

1

0.5

2.1

5.5 V

1.1

3.85

D

3.0 V

0.5

2.1

5.5 V

1.1

3.85

P, L, R, F

3.0 V

0.5

2.1

5.5 V

1.1

3.85

Hysteresis voltage

VH

41  51

Calculated value

(VH  = VT+ - VT-)

02

3.0 V

1, 2, 3

0.3

1.2

V

4.5 V

0.4

1.4

5.5 V

0.5

1.6

M

02

3.0 V

1

0.3

1.2

5.5 V

0.5

1.6

D

3.0 V

0.3

1.2

5.5 V

0.5

1.6

P, L, R

3.0 V

0.3

1.2

5.5 V

0.5

1.6

F

3.0 V

0.3

1.4

5.5 V

0.5

1.9