MIL-M-38510-757 Microcircuits, Digital, Advanced Cmos, Buffer Gates, Monolithic Silicon, Positive LogicThis specification covers the detail requirements for monolithic silicon, advanced CMOS, logic microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assurance RHA are provided and are reflected in the complete Part or Identifying Number PIN. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535 see 6.3.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27

MIL-M-38510/757C

3. REQUIREMENTS

3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and

6.4).

3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein.

3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein.

3.3.1 Terminal connections. The terminal connections shall be as specified on figure 1.

3.3.2 Truth tables. The truth tables shall be as specified on figure 2.

3.3.3 Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to the qualifying activity or preparing activity upon request.

3.3.4 Case outlines. The case outlines shall be as specified in 1.2.3 herein.

3. 4 Electrical performance characteristics and post irradiation end-point electrical parameter limits. Unless otherwise specified, the electrical performance characteristics and postirradiation end-point electrical parameter limits are as specified in table I and apply over the case operating temperature range specified. Test conditions for these specified characteristics and limits are as specified in table I.

3.5 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6).

3.6 Electrical test requirements. The electrical test requirements for each device class shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. Radiation hardness assurance level M, D, P, L , R, and F (see MIL-PRF-38535) in table I are postirradiation end-point electrical parameters.

3.7 Radiation hardness assurance identifier. The radiation hardness assurance identifier shall be in accordance with

MIL-PRF-38535 and herein (see 3.6).

3.8 Marking. Marking shall be in accordance with MIL-PRF-38535.

3.9 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 37 (see

MIL-PRF-38535, appendix A).