MIL-M-38510-507 Microcircuits, Memory, Digital, CMOS Ultraviolet Erasable Programmable Array Logic, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, erasable programmable array logic microcircuits which employ an EPROM cell as the programming element. Two product assurance classes B and S and a choice of case outlines and lead finishes are provided and are reflected in the complete part or identifying number PIN. For this product, the requirements of MIL-M-38510 have been

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Parameter

Symbol

VPP

Conditions

   TA  = +25°C ± 5°C        

Device types

Limits

Unit

Min

Max

Programming voltage

All

12.0

13.0

V

Supply voltage during

programming

VCCP

All

4.75

5.25

V

Input high voltage during programming

VIHP

All

3.0

VCCP

V

Input low voltage during programming

VILP

All

-3.0

0.4

V

Output high voltage

VOH

All

2.4

V

Output low voltage

VOL

All

0.4

V

Programming supply current

IPP

All

40

mA

Delay to programming voltage

tP

All

20

ms

Delay to program

tDP

All

1

µs

Hold from program or verify

tHP

All

1

µs

VPP  rise and fall time

tR, F

All

50

ns

Address setup time

tAS

All

1

µs

Address hold time

tAH

All

1

µs

Data setup time

tDS

All

1

µs

Data hold time

tDH

All

1

µs

Programming pulse width

tPP

All

0.4

10

ms

Programming pulse width for security

tSPP

All

50

ms

Delay from program to verify

tDV

All

2

µs

Delay to data out

tVD

All

1

µs

Verify pulse width

tVP

All

2

µs

Verify to high Z

tDZ

All

1

µs