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MIL-M-38510-507 Microcircuits, Memory, Digital, CMOS Ultraviolet Erasable Programmable Array Logic, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, erasable programmable array logic microcircuits which employ an EPROM cell as the programming element. Two product assurance classes B and S and a choice of case outlines and lead finishes are provided and are reflected in the complete part or identifying number PIN. For this product, the requirements of MIL-M-38510 have been

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MIL-M-38510/5078

NOTES:

1.  CL  = 50 pF minimum, including jig and probe capacitance. tPHZ  and tPLZ are specified with CL  = 5 pF.

R1 = 105 ohms  ± 1 percent.

2.  Outputs may be under load simultaneously.

3.  VIH  = 3.0 V, VIL  = 0.0 V.

4.  For tPZH, tPZL, tPHZ, and tPLZ:


Output

Test                      Vx                                 Measurement level


tPHZ

2.06

2.56 V

tPZL

2.06

1.56 V

tPHZ

1.5

VOH  - 0.5 V

tPLZ

2.60

VOL  + 0.5 V


OUTPUT CONTROL SWITCHING WAVEFORM


FIGURE 4.  Switching time test circuit and waveforms.


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