MIL-M-38510-289 Microcircuits, Digital, Cmos 4096 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS static, 4096-bit random access memories. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/289A APPENDIX A

FUNCTIONAL ALGORITHMS

A.1  SCOPE

A.1.1  Scope  Functional algorithms are test patterns which define the exact sequence of the tests used to verify proper operation of a random access memory (RAM).  Each algorithm serves a specified purpose for the testing of the device.  This Appendix is a mandatory part of the specification.  The information contained herein is intended for compliance.

A.2  FUNCTIONAL PATTERNS.

A.2.1  Pattern 1. CKBD

a.    Write a checkerboard pattern into memory (0 in address 0) from address 0 to N.

b.        When the  CS  off test is performed, attempt to write the complement pattern into cell memory with the device not selected.

c.    Read checkerboard pattern in the memory.

A.2.2  Pattern 2.

CKBD .     Same as CKBD only with data complemented. A.2.3  Pattern 3.

MARCH

a.    Write test word into every location.

b.    The addressing is then scanned from location "0" to location "N".

c.    At each address, the test word is read and a complemented test word is written back into the same location. d.    The addressing is then scanned in reverse from location "N" to location "O".

e.    At each address, the complemented test word is read and the test word is written back in.

A.2.4  Pattern 4.

GALPAT.  This program will test all bits in the array.  The addressing and interaction between bits for ac performance. The memory is initialized by writing a field of "1" and then a field of "0" into the cell memory.

a.    Write a "1" in word location 0 (reference location). b.    Word 0 is read.

c.    Word 1 is read. d.    Word 0 is read.

e.    Word 2 is read. f.     Word 0 is read.

g.    The reading procedure continues back and forth between word 0 and the next higher number word until word

4095 (01, 03) or 1023 (02, 04) is reached.  Then increment to the next word which becomes the reference location and then step a through g again until all the words in the memory are used at least once as a

reference.

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