MIL-M-38510-289 Microcircuits, Digital, Cmos 4096 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS static, 4096-bit random access memories. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-385101289A

TABLE I. Electrical performance characteristics - Continued.

Test	Symbol	Conditions 11 21 31	Device	Limits		Unit
Test	Symbol	Conditions 11 21 31	Device	Min	Max	Unit
Chip select to end of write	tELWH	See table III and figure 5	01	35		ns
			02	30		ns
			03	45		ns
			04	50		ns
Address valid to end of write	tAVWH		01	35		ns
			02	30		ns
			03	45		ns
			04	50		ns
Address setup time	tAVWL		All	0		ns
Write pulse width	tWLWH		03	25		ns
			04	40		ns
			01	20		ns
			02	30		ns
Write recovery time	tWHAX		01	0		ns
			02,04	5		ns
			03	10		ns
Data valid to end of write	tDVWH		01,02,04	20		ns
Data valid to end of write	tDVWH		03	25		ns
Data hold time	tWHDX		01,03	10		ns
Data hold time	tWHDX		02,04	0		ns
Write enable to output in high Z 71, 51	tWLQZ		01,04	0	20	ns
			02	0	10	ns
			03	0	25	ns
Output active from end of write 71, 51	tWHQX		All	0		ns

11 Output levels are tested in static state and are specified over voltage range of VCC.

21 Unless otherwise specified, the dynamic load shall be in accordance with figure 5 (load A).

31 Complete terminal conditions are as specified in table III.

41 Duration not to exceed 1 second.

51 Not tested.

61 Chip deselected for a finite time that is less than 55 ns prior to selection. (If the deselect time is 0 ns, the chip is by definition selected and access occurs according to Read Cycle No. 1.)

71 Transition is measured ± 500 mV from steady state voltage using figure 5 (load B).

4.4 Technology Conformance Inspection (TCI). Technology conformance inspection shall be in accordance with

MIL-PRF-38535 and as specified herein.

4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows:

a. Electrical test requirements shall be in accordance with table II herein. b. Subgroups 5 and 6 shall be omitted.

c. Subgroups 4 (Cin, Co measurement) shall be measured only for initial qualification and after process or design changes which may affect input and output capacitance. Capacitance shall be measured between the designated terminal and VSS at a frequency of 1 MHz and a signal amplitude not to exceed 50 mV rms. Perform Cin and Co parameter measurements to table I limits.