MIL-M-38510-289 Microcircuits, Digital, Cmos 4096 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS static, 4096-bit random access memories. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/289A

1/      See appendix for description of algorithms.

2/      An input preconditioning logic sequence shall be applied that results in a logic "1" at the output to be measured.  Logic input levels during measurement shall be:  VIL = 0.8 V; VIH  = 2.0 V.

3/      An input preconditioning logic sequence shall be applied that results in a logic "0" at the output to be measured.  Logic input levels during measurement shall be:

4/      ISB = 10 mA for device type 01; 25 mA for device type 03.  The device manufacturer may at his option do either test or both tests.

5/      ICC  = 110 mA for device type 01, 140 mA for device type 03.

6/      See 4.4.1c.

7/      VIL  = GND, VIH = 6.0 V, pause time = 250 ms/loop max,  CS  = high, only performed once at 125°C, and VCC  = 7.0 V min.

8/      VIL  = 0.8 V and VIH  = 2.0 V.

9/      Algorithm has 60 ns where chip is deselected between the write.

10/    VIL  = GND, VIH = 3.0 V, and all address setup times are at minimums.

11/    VIL  = GND, VIH = 3.0 V, and all write pulse timing are at minimums.

12/    VIL  = GND, VIH = 3.0 V, and all address ending times are at minimums.

13/    VIL  = GND, VIH = 3.0 V, and tAVQV  is measured at minimum timing.

14/    VIL  = GND, VIH = 3.0 V, tELQV1 and tELQV2  are measured at minimum timing.

15/    VIL  = 0.0 V, VIH = 3.0 V, and all parameters are measured at minimum timing.

16/    tAVQV = 35 ns for device type 01; 55 ns for device type 03.

17/    tELQV1 = 35 ns for device type 01; 55 ns for device type 03.

18/    tELQV2 = 35 ns for device type 01; 55 ns for device type 03.

19/    tAVAV  = 35 ns for device type 01; 55 ns for device type 03.

20/    tELWH = 35 ns for device type 01; 45 ns for device type 03.

21/    tAVWH = 35 ns for device type 01; 45 ns for device type 03.

22/    tWLWH = 35 ns for device type 01; 25 ns for device type 03.

23/    tWHAX = 20 ns for device type 01; 10 ns for device type 03.

24/    tDVWH = 20 ns for device type 01; 25 ns for device type 03.

*        The device manufacturer may at his option, do either test or both tests.

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