MIL-M-38510-289 Microcircuits, Digital, Cmos 4096 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS static, 4096-bit random access memories. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/289A

TABLE II. Electrical test requirements.

MIL-PRF-38535 test requirements	Subgroups (see table III)
MIL-PRF-38535 test requirements	Class S devices 1/	Class B Devices 1/
Interim electrical parameters	2, 8 *	2, 8 *, 10
Final electrical test parameters	1, 2, 3, 7, 8	1, 2, 3, 7, 8*, 10, 11
Group A test requirements	1, 2, 3, 4, 7, 8, 9, 10, 11	1, 2, 3, 4, 7, 8*, 9, 10, 11
Group B end point electrical test parameters when using the method 5005 QCI option.	1, 2, 3, 7, 8, 9, 10, 11	N/A
Group C end-point electrical parameters	1, 2, 3, 7, 8, 9, 10, 11	2, 10
Group D end-point electrical parameters	1, 2, 3, 7, 8	2, 10

* Maximum temperature only.

** PDA applies to subgroups 1 and 7

1/ For subgroup 4, see 4.4.1c.

4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535 and as follows. a. Electrostatic discharge sensitivity (ESDS) testing shall be performed in accordance with MIL-STD-883

method 3015. The option to categorize devices as ESD sensitive without performing the test is not

allowed. Device types categorized as ESD sensitive shall be further tested using method 3015 modified as follows:

(1) For use in this specification method 3015 table I pin combination number (4) shall be "input (B) to V+ A)" and combination number (5) shall be "output (B) to V+ (A)".

(2) The reverse polarity procedure shall be applicable to all pin combinations.

(3) Only those device types that pass ESDS testing at 1,000 volts or greater shall be considered as conforming to the requirements of this specification.

4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows:

a. End-point electrical tests shall be as specified in table II herein.

b. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883.

4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End-point electrical parameters shall be as specified in table II herein.

4.5 Methods of Inspection. Methods of inspection shall be specified as follows:

4.5.1 Voltage and current. Unless otherwise specified, all voltages given are referenced to the microcircuit VSS

terminal. Currents given are conventional and positive when flowing into the referenced terminal.

4.5.2 Life test, burn in, cool down, and electrical test procedure. When devices are measured at 25°C following application of the life or burn in test condition, all devices shall be cooled to 35°C prior to removal of bias voltages.