MIL-M-38510-289 Microcircuits, Digital, Cmos 4096 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS static, 4096-bit random access memories. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/289A

WAVEFORMS

NOTES:

1. WE is high for read cycles.

2. Device is continuously selected, CS transition low.

3. Addresses valid prior to or coincident with CS transition low.

4. See table 1 for limits and complete terminal conditions.

5. Input and output timing reference levels are 1.5 volts with input pulse levels of ground to 3.0 volts.

6. tELQX and tEHQZ are measured at ± 500 mV from steady state with 5 pF load.

Read cycle waveforms and test conditions for device types 01,02, 03, and 04

FIGURE 5. Load circuit and timing diagram - Continued.