MIL-M-38510-111 Microcircuits, Analog Switch With Driver, Monolithic And Multi-Chip SiliconThis specification covers the detail requirements for silicon, break-before-make, monolithic and multi-chip analog switches with drivers. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.3

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TABLE III.  Group A inspection for device type 08 -Continued.

NOTE8:

1/  The test circuits used with table III are shown in figures 2, 3, and 4.  The waveforms on figure 5 apply to all device types as specified within table III (see tests for  tON and tOFF).  The waveforms in figure 6 apply to device types 05, 06, 07, and 08 as specified within table III.

2/  RD8 (in ν) = -100 (measured value +7.5) for device types 01, 03, 05, and 07.  RD8 (in ν) = -100 (measured value +10) for device types 02, 04, 06, and 08.

RD8 may be measured differentially with respect to VA.  In case of differentially measured voltages, the table III limits representing voltage drop across the tested switch must be maintained.

3/  The input pulse generator shall have the following characteristics:  (a) Vgen  = 3.0 V  (b) Rise time σ 10 ns  (c) Fall time σ 10 ns and (d) PRR = 100 kHz at 50%

duty cycle.

4/  The input generator shall have the following characteristics: Vgen  = 1 VP-P at 10 MHz.  VCT  is measured on monolithic devices only.

5/  Input (IN 3/) shall be applied to either 81  or 83.

6/  Input (IN 3/) shall be applied to either 82  or 84.

7/  VCT   applies only to monolithic devices.